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SUM90N08-7m6P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V (BR)DSS (V) R DS(on) ( Ω )
75 0.0076 at V GS = 10 V
I D (A)
90 d
Q g (Typ.)
58
FEATURES
? TrenchFET ? Power MOSFETS
? 175 °C Junction Temperature
? 100 % R g and UIS Tested
RoHS
COMPLIANT
APPLICATIONS
? Power Supply
- Secondary Synchronous Rectification
? Industrial
TO-263
G
D
G
D S
Top V ie w
S
Orderin g Information: SUM90 N 0 8 -7m6P-E3 (Lead (P b )-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
75
± 20
Unit
V
Single Avalanche Energy
150
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 70 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C c
I D
I DM
I AS
E AS
P D
T J , T stg
90 d
81
200
50
125
b
3.75
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
c
R thJA
R thJC
40
1
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69578
S-80799-Rev. B, 14-Apr-08
www.vishay.com
1
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